Samsung Proshivka Nand
At Samsung's Tech Day event today in San Jose, the company shared their SSD roadmap for transitioning to 96-layer 3D NAND and introducing four bit per cell (QLC) NAND flash memory. This week Samsung announced a new solid-state drive based on what the company is calling Z-NAND. The SZ985 Z-SSD (again a new acronym) offers high performance and low latency, compared to a traditional SSD product.
* Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Ferguson ariva 150 combo firmware patch. Sequential performance measurements based on CrystalDiskMark v.5.0.2 and IOmeter 1.1.0. The sequential write performances after Intelligent TurboWrite region are 300 MB/s for 250/500 GB and 500 MB/s for 1 TB.
* Test system configuration: Intel Core i5-3550 CPU @ 3.3 GHz, DDR3 1333 MHz 4 GB, OS – Windows 7 Ultimate x64, Chipset: ASUS P8H77-V * The TurboWrite buffer size varies based on the capacity of the SSD; 12 GB for 250 GB model, 22 GB for 500 GB model, 42 GB for 1 TB model and 78 GB for 2/4 TB. For more information on the TurboWrite, please visit www.samsungssd.com. • MZ-76E250BW (250 GB) 5 Years or 150 TBW • MZ-76E500BW (500 GB) 5 Years or 300 TBW • MZ-76E1T0BW (1,000 GB) 5 Years or 600 TBW • MZ-76E2T0BW (2,000 GB) 5 Year or 1,200 TBW • MZ-76E4T0BW (4,000 GB) 5 Year or 2,400 TBW • 1) 1 GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise). • 2) Performance may vary based on system hardware & configuration • 3) Actual power consumption may vary depending on system hardware & configuration.